Device and method for making dimensional measurements on multilayer objects such as wafers

ABSTRACT

An imaging device is provided for localizing structures through the surface of an object such as a wafer, with a view to positioning a measuring sensor relative to the structures, includes: (i) an imaging sensor; (ii) an optical imager able to produce, on the imaging sensor, an image of the object in a field of view; and (iii) an illuminator for generating an illuminating beam and lighting the field of view in reflection, in which the illuminating beam and lighting the field of view in reflection, in which the illuminator is able to generate an illuminating beam the spectral content of which is adapted to the nature of the object, such that the light of the beam is able to essentially penetrate into the object. Also provided is a system and a method for carrying out dimensional measurements on an object such as a wafer.

TECHNICAL FIELD

The present invention relates to a device and method for makingdimensional measurements on multi-layer objects such as wafers. It alsorelates to an imaging device making it possible to locate structuresbelow the surface of such objects, in particular for the purpose ofpositioning measuring sensors relative to these structures.

The field of the invention is more particularly but not limitativelythat of the measurement and dimensional control of devices in the fieldof microelectronics, microsystems (MEMs) or integrated optics.

STATE OF THE PRIOR ART

Manufacturing techniques for microelectronics and microsystems (MEMs,MOEMs) are developing towards the production of complex volumestructures, which can allow better integration of the functions of thesesystems in their volume.

These structures are characterized by the superimposition of a number,sometimes a large number, of layers of components, with interconnectiontracks (or vias) which connect these layers of components. Thesetechniques belong to what is frequently called “chip level packaging” or“3D integration”.

The layers of components can be produced on separate wafers, which arethen superimposed and interconnected.

More precisely, the manufacturing methods can comprise the followingsteps:

-   -   etching of the vias, which are present as holes or trenches        opening on only one side of the wafer (the components surface);    -   metallization of the vias and at least partial production of the        conductor tracks and components on the components surface,    -   thinning of the wafer by polishing (usually by a mechanical        method) of the rear surface (i.e. the surface opposite the        components surface). The wafer is stuck to a temporary transport        wafer in order to obtain sufficient mechanical rigidity. In        fact, after polishing, the thickness of the wafer can be reduced        to a few tens of micrometres.

The thinning makes it possible to reduce the thickness of the wafer to apredetermined thickness, or until the vias break through.

It is very important to control the thickness of residual materialbetween the bottom of the vias and the rear surface of the wafer duringthe thinning operation.

Different techniques are known which make it possible to measure thisthickness of residual material.

For example, techniques based on time-domain or spectral-domainlow-coherence interferometry are known.

The document U.S. Pat. No. 7,738,113 of Marx et al. is also known, whichdescribes a device making it possible to carry out this measurement withprobes based on a scanning confocal technique or chromatic dispersionconfocal technique.

However, the problem arises of locating the vias which cannot be seenfrom the rear surface of the wafer. This problem is not trivial as thesevias may be a few micrometres or a few tens of micrometres wide, and itmust be possible to accurately position in line with them a measurementbeam the diameter of which is not much greater.

It is known to couple point distance-measuring sensors with an imagingsystem which produces an image of the surface of the wafer, and whichmakes it possible to accurately position the measurement beams.

These systems do not make it possible to solve this problem ofpositioning because:

-   -   as explained previously, the vias cannot be seen from the rear        surface of the wafer;    -   at the time when the thinning operation is carried out, there        are already components and metal tracks which can take up        several square millimetres on the components surface of the        wafer. These components completely mask the position of the        vias, and they are moreover completely opaque, which prevents        location of the vias by transparency.

Beyond this particular problem, the development of the “chip levelpackaging” techniques results in a need to be able to accurately measurethicknesses or positions of multiple layers of stacked materials.

These layers can be of the order of a micrometre or less up to severalhundred micrometres, and there may be a large number of them. Inpractice, none of the measuring methods previously mentioned(interferometry or confocal) is capable of satisfying all of thespecifications for this type of measurement, which in practice leads tohaving to multiply the measurement devices.

An object of the present invention is to overcome the drawbacks of theprior art relating to distance and thickness measurements on complexstructures.

An object of the present invention is in particular to propose a systemwhich makes it possible to locate vias or similar structures whichcannot be seen from the surfaces of a wafer.

An object of the present invention is also to propose a system whichmakes it possible to carry out residual thickness measurements on viasfrom the rear surface of a wafer.

Finally, an object of the present invention is to propose a system whichmakes it possible to carry out thickness measurements in an extensivedynamic range and on a high number of interfaces.

DISCLOSURE OF THE INVENTION

This objective is achieved with an imaging device for locatingstructures through the surface of an object such as a wafer, in order toposition a measuring sensor relative to said structures, comprising:

-   -   an imaging sensor,    -   optical imaging means capable of producing, on said imaging        sensor, an image of the object in a field of view,    -   illuminating means for generating an illuminating beam and        lighting said field of view in reflection,        characterized in that the illuminating means are capable of        generating an illuminating beam the spectral content of which is        suited to the nature of the object, so that the light of said        beam is capable essentially of penetrating into said object.

According to embodiments, the illuminating means can comprise a spectralfilter capable of limiting the spectrum of the illuminating beam towavelengths which are capable essentially of penetrating into theobject.

The spectral filter can comprise:

-   -   a plate made of a material identical or similar to a material of        the object;    -   a silicon plate;    -   a plate filtering the optical spectrum so as to allow only the        wavelengths greater than a cutoff wavelength to pass through;    -   a plate filtering the optical spectrum so as to allow only the        wavelengths greater than one micrometre to pass through;    -   a plate of the high-pass (wavelength) interference filter type.

The illuminating means can also comprise:

-   -   a light source capable of emitting light with a spectrum        comprising first wavelengths capable essentially of being        reflected by the surface of the object and second wavelengths        capable essentially of penetrating into the object, and    -   switching means for inserting the spectral filter into, or        withdrawing it from, the illuminating beam.

According to other embodiments, the illuminating means comprise a lightsource capable of emitting a light the spectrum of which is limited towavelengths capable essentially of penetrating into the object.

The illuminating means can also comprise a second light source capableof emitting a light the spectrum of which is limited to wavelengthscapable essentially of being reflected by the surface of the object.

According to embodiments, the device according to the inventioncomprises:

-   -   an illuminating beam incident in the field of view along an axis        of illumination substantially parallel to the optical axis of        the imaging system;    -   an illuminating beam incident in the field of view along an axis        of illumination forming, with the optical axis of the imaging        system, an angle greater than the angle defining the numerical        aperture of said imaging system.

According to embodiments, the device according to the invention can alsocomprise a source of light in transmission arranged so as to illuminatethe field of view in transmission, through the object.

The imaging sensor can comprise a CCD- or CMOS-type sensor on a siliconsubstrate.

According to another aspect of the invention, a system is proposed forcarrying out dimensional measurements on an object such as a wafer,comprising at least one optical sensor for measuring thickness and/ordistance, and an imaging device according to the invention.

The system according to the invention can also comprise:

-   -   at least one optical sensor for measuring thickness and/or        distance based on a principle of time-domain low-coherence        interferometry;    -   at least one optical sensor for measuring thickness and/or        distance based on a principle of spectral-domain low-coherence        interferometry, or optical frequency scanning interferometry;    -   at least one optical sensor for measuring thickness and/or        distance with a measurement beam passing through the distal        objective of the optical imaging means;    -   at least one optical sensor for measuring thickness and/or        distance, of the chromatic confocal type.

According to embodiments, the system according to the invention cancomprise at least two optical sensors for measuring thickness and/ordistance, arranged respectively, one on a surface of the object on theside of the optical imaging means and the other on a surface oppositesaid object.

According to yet another aspect of the invention, a method is proposedfor measuring the residual thickness of material between a surface of awafer and structures such as vias, comprising steps of:

-   -   locating said structures through said surface of the wafer by        means of an imaging device according to the invention,    -   positioning an optical sensor for measuring thickness and/or        distance opposite said structure, and    -   measuring the residual thickness of material.

DESCRIPTION OF THE FIGURES AND EMBODIMENTS

Other advantages and features of the invention will become apparent onreading the detailed description of implementations and embodiments thatare in no way limitative, and from the following attached drawings:

FIG. 1 shows an embodiment of a measurement system according to theinvention,

FIG. 2 shows examples of measurement problems solved by the measurementsystem of FIG. 1,

FIG. 3 shows a schematic diagram of a measuring sensor based ontime-domain low-coherence interferometry.

With reference to FIG. 1, the measurement system according to theinvention makes it possible to carry out dimensional measurements,including thickness measurements, on a measurement object 20.

FIG. 2 shows an example of a measurement object 20 which is constitutedby an assembly of layers of materials 1, 12, 13 with components andtracks 2 present on certain interfaces.

This example is purely illustrative and does not aim to faithfullyrepresent a particular step in a process for manufacturing components.It simply shows, in a non-limitative manner, a set of measurementproblems which may be encountered, not necessarily simultaneously,during a process for manufacturing components in micro-optics,microsystems or microelectronics, and more particularly when techniquesfor assembling components in 3 dimensions, or techniques of the “chiplevel packaging” type are implemented.

It is understood that the measurement system according to the inventioncan be implemented on measurement objects 20 with any type of materialscompatible with the measurement techniques and wavelengths used, subjectto routine adaptations within the scope of a person skilled in the art.

These materials can comprise in particular silicon (Si), III-V compoundssuch as gallium arsenide (GaAs) or indium phosphide (InP), siliconcarbide (SiC), sapphire crystal, silica, silicon-on-insulator (SOI) etc.in the form of wafers (flat discs of material), deposited layers etc.

The measurement object 20 shown in the example of FIG. 2 comprises asilicon wafer 1, in which vias 3 have been etched. These vias 3 (or“Through Silicon Vias”, TSV) correspond to hollow structures, such astrenches or holes, a few micrometres to several tens of micrometreswide.

The vias 3 are for example intended to produce interconnections betweencomponents or metal tracks 2 and other components added, in a subsequentstep of the process, to the outer surface of the wafer 1. In this casethey are metallized.

To be able to produce these interconnections, it is necessary to thinthe wafer 1 to make the vias 3 apparent on its outer surface. Thisthinning operation is usually carried out by polishing the outer surfaceof the wafer 1. It requires regular and accurate inspection of theresidual thickness 9 between the vias and the outer surface of the wafer1 during the process. This measurement is termed an RST (“RemainingSilicon Thickness”) measurement.

To be able to carry out this measurement, it must be possible to locatethe vias 3 through the surface of the wafer 1 and accurately positionthe measurement beam of a distance or thickness sensor on themeasurement axis 5. Moreover, the vias 3 cannot be located bytransparency because they are in line with opaque components 2 with muchlarger dimensions.

As shown in FIG. 2, other measurement problems are advantageously solvedwith the system according to the invention:

-   -   along the measurement axis 6, measurement of the thickness 10 of        stacked structures (or location of the interfaces) when opaque        components 2 are situated in the path of the measurement beams;    -   along the measurement axis 7, measurement of the thicknesses 10        of a large number of successive layers, with location of the        interfaces,    -   along the measurement axis 8, thickness measurements in a large        dynamic range, on layers of material 11 of the order of a        micrometre up to thicknesses of material 10 of several hundred        micrometres, with location of the interfaces.

The measurement system of FIG. 1 and the way in which it makes itpossible to carry out the measurements of FIG. 2 will now be described.

The measurement system according to the invention comprises:

-   -   point optical distance or thickness measuring sensors, which        make it possible to acquire measurements along measurement axes        5, 6, 7, 8,    -   an imaging device for visualizing the object 20 and for being        able to position the measuring sensors relative to this object,    -   a sample support intended to receive the measurement object 20,        with a mechanical positioning system for moving it relative to        the imaging device and the measuring sensors.

Imaging Device

The imaging device comprises a camera 21, with a matrix sensor 22 of theCCD or CMOS type.

A set of optical imaging means 34, essentially constituted by lenses andbeam-splitting or beam-combining elements (beam splitters, partiallytransparent mirrors, cubes), makes it possible to image the object 20 ina field of view on the sensor 22 of the camera 21.

These optical imaging means 34 comprise in particular a distal optic 36,which makes it possible to adjust the magnification of the image. Thisdistal optic comprises a microscope objective mounted on a revolvingnosepiece 37 so that it can be easily changed.

The imaging device also comprises illuminating means for lighting thefield of view on the object 20.

The imaging device must make it possible to:

-   -   visualize the surface of the object 20, in order to make it        possible to inspect it or in order to locate measuring sensors        relative to structures which may be present there,    -   locate structures such as components 2, buried in the object 20,        in cases where they can be seen by transparency, for example in        order to carry out measurements between these structures 2 along        the measurement axis 7 of the example of FIG. 2,    -   and also to locate structures such as vias 3, buried in the        object 20, in cases where they cannot be seen by transparency,        for example in order to carry out measurements on these        structures 3 along the measurement axis 5 of the example of FIG.        2.

Moreover, it may be useful to be able to detect both the components 2and the vias 3, for example to identify the vias 3 relative to thecomponents 2.

The need to be able to visualize both the surface of the object 20 andburied structures 3 which cannot be seen in transparency leads tocontradictory constraints: It must be possible in one case to image thesurface under good conditions and in the other case to image structures3 which are sometimes just a few micrometres deep below this surface,without being disturbed by the reflections from the surface.

These problems are solved in the invention thanks to the lightingconfigurations utilized.

Silicon is a material which is opaque in the visible part of the opticalspectrum, and which becomes transparent for wavelengths in thenear-infrared, greater than 1 micrometre.

Interestingly, there are cameras 21 based on CCD or CMOS sensors 22 on asilicon substrate which have a sensitivity extending up to wavelengthsof 1.1 μm. These cameras have the advantage, over infrared cameras, ofremaining standard industrial cameras of moderate cost.

It is therefore possible to carry out imaging through silicon with suchcameras, and suitable lighting. However, their sensitivity in the caseof wavelengths greater than 1 μm is mediocre and, unless particular careis taken, the measurements are made impossible by the reflectivity ofthe surfaces of the object 20.

The imaging device according to the invention comprises a first lightingpath 23 intended to produce lighting in reflection of the bright fieldtype. This lighting produces an illuminating beam 25 which is incidenton the object 20 along an axis of illumination substantially parallel tothe optical axis 49 of the imaging system. The light reflected ordiffused on all the surfaces substantially perpendicular to the opticalaxis 49 contributes to the image in the camera 21.

The first lighting path 23 comprises a light source 24.

In the embodiment shown, this light source 24 comprises a halogen lampconnected to the optical system by an optical fibre bundle. This lightsource 24 emits light in visible and near-infrared wavelengths.

The first lighting path 23 also comprises a spectral filter 26 insertedinto the illuminating beam 25. The function of this spectral filter isto limit the spectrum of the illuminating beam 25 incident on the object20 so that it essentially comprises only wavelengths which can penetrateor be transmitted into the object 20 (i.e. for which the object 20 issubstantially transparent). In the present case, with an object 20 madeof silicon, these are wavelengths of the order of 1 μm or more.

The spectral filter 26 thus makes it possible to minimize thereflections on the outer surface of the object 20 due to the wavelengthsof the source 24 which cannot penetrate into the object 20 and whichwould therefore, without the filter 26, essentially be reflected by thissurface.

Eliminating or at least strongly attenuating these reflections whichwould otherwise saturate the image in the camera 21 makes it possible toobtain an image of the structures (such as vias 3) situated below thesurface of the object 20 with sufficient quality to be able to locatethem.

Advantageously, the spectral filter 26 is constituted by a thin layer ofthe same material as the object 20, i.e., in the embodiment shown,silicon.

Thus, it can be produced at relatively low cost, whilst having spectralcharacteristics that are perfectly suited to the material of the object20 since the wavelengths transmitted through the filter 26 are alsothose which are best transmitted through the surface of the object 20.

The first lighting path 23 also comprises a second light source 60 whichmakes it possible to generate an illuminating beam 25 with wavelengthsfor which the reflectivity of the surface of the object 20 is high (herethe visible wavelengths), without passing through the spectral filter26. In the embodiment shown, this second light source comprises alight-emitting diode. The light source 24 and the second light source 60are electrically switched.

The imaging device according to the invention comprises a secondlighting path 27 intended to produce lighting in reflection of the darkfield type. This lighting produces an illuminating beam 30 which isincident on the object 20 along an axis of illumination which forms,with the optical axis 49 of the imaging system, an angle greater thanthe angle 35 defining the numerical aperture of the imaging system (i.e.the angle 35 between the optical axis 49 of the imaging system and theray furthest from the optical axis 49 which enters the distal optic 36).In this configuration, only the light diffused (on the surface or in theobject 20) in the direction of the optical imaging system contributes tothe image in the camera 21.

In the embodiment of FIG. 1, the angle between the axis of the darkfield illuminating beam 30 and the optical axis 49 of the imaging systemis of the order of 60 degrees, which makes it possible to cover anglesof approximately 50 degrees to 70 degrees.

The second lighting path 27 comprises a light source 28.

In the embodiment shown, this light source 28 comprises a halogen lampconnected to the optical system by an optical fibre bundle. This lightsource 28 emits light in visible and near-infrared wavelengths.

The second lighting path 27 also comprises a spectral filter 29 insertedinto the illuminating beam 30. The function of this spectral filter isto limit the spectrum of the illuminating beam 30 incident on the object20 so that it essentially comprises only wavelengths which can penetrateor be transmitted into the object 20 (i.e. for which the object 20 issubstantially transparent). In the present case with an object 20 madeof silicon, these are wavelengths of the order of 1 μm or more.

The spectral filter 29 thus makes it possible to minimize thereflections on the outer surface of the object 20 due to the wavelengthsfrom the source 28 which cannot penetrate into the object 20 and whichwould therefore, without the filter 29, essentially be reflected by thissurface.

Eliminating or at least strongly attenuating these reflections whichwould otherwise saturate the image in the camera 21 makes it possible toobtain an image of the structures (such as vias 3) situated below thesurface of the object 20 with a sufficient quality to be able to locatethem.

Advantageously, the spectral filter 29 is constituted by a thin layer ofthe same material as the object 20, i.e., in the embodiment shown,silicon.

Thus, it can be produced at relatively low cost, whilst having spectralcharacteristics that are perfectly suited to the material of the object20 since the wavelengths transmitted through the filter 29 are alsothose which are best transmitted through the surface of the object 20.

The imaging device according to the invention comprises a third lightingpath 31 intended to produce lighting in transmission. This lightingproduces an illuminating beam 33 which is incident on the object 20 atits surface opposite the imaging system. The light transmitted throughthe object 20 contributes to the image in the camera 21, and thus makesit possible to visualize structures 2 of the object 20 which can be seenin transparency.

The third lighting path 23 comprises a light source 32.

In the embodiment shown, this light source 32 comprises a halogen lampconnected to the optical system by an optical fibre bundle. This lightsource 32 emits in particular light in near-infrared wavelengths,capable of passing through the object 20.

There is no problem with stray reflectivity in this lightingconfiguration since the reflections on the surfaces of the object 20cannot be captured by the imaging means.

The system is designed so that the first, second and third lightingpaths can be used simultaneously, or separately, in order to obtainimages making it possible to locate structures in a wide variety ofsituations.

The light sources 24, 28 and 32 are adjustable in intensity.

The spectral filters 26, 29 can be easily changed in order to be suitedto the materials of the object 20.

The dark field lighting of the second lighting path 27 makes it possiblein certain cases to better locate structures 3, in particular in thecase where they would be difficult to distinguish from the lightbackground generated by the first lighting path 23.

It is to be noted that, insofar as the system according to the inventionis intended to carry out measurements on complex structures in aproduction environment, the possibility of producing complex lightingsthat are best suited to needs, in an automated manner or at least withminimum handling, is crucial.

Moreover, the utilization of the three lighting paths is not necessarilyprovided in all the configurations.

Measurement System

As explained previously, the measurement system comprises the imagingdevice and point optical distance or thickness measuring sensors 45, 46,47.

These sensors are interfaced with the optical imaging means 34 so thatthe imaging device makes it possible to accurately position themeasurement points on the object 20.

The point optical distance or thickness measuring sensors 4 as utilizedin the embodiment of FIG. 1 will now be described.

The system according to the invention comprises a sensor 46 whichoperates according to a principle of time-domain low-coherenceinterferometry. This technique is also called “Time-Domain OpticalCoherence Tomography” or TD-OCT.

FIG. 3 shows a schematic diagram of such a TD-OCT sensor 46, based on afibre-optic interferometry architecture.

The TD-OCT sensor 46 comprises a light source 61 (such as afibre-coupled superluminescent diode) which emits a polychromatic lightin the near-infrared (for example around 1310 nm), so as to be able topenetrate the layers of the object 20.

The light from the source is split into two components by a fibrecoupler 62. These two components are reflected by a delay line 64 and aninternal reference 63 respectively, so as to introduce an optical delaybetween them. The reflections are recombined by the coupler 62, anddirected towards a measurement collimator 39 and the object to bemeasured 20 through the coupler 66 and an optical fibre 60. Anadditional reflection is generated at the level of the measurementcollimator 39, on a reference surface.

The light reflected by a measurement object 20 and collected onreturning, by the measurement collimator 39, as well as the reflectionon the reference surface in the collimator 39 are directed through thecoupler 66 towards a detector 65.

Temporal scanning is carried out by the delay line 64. Each time theoptical delay between the reference in the collimator 39 and areflection on an interface of the object 20 is reproduced between theinternal reference 63 and the delay line 64, an interference peak isobtained on the signal of the detector 65

A signal is thus obtained, in which the position of the interferencepeaks as a function of the delay introduced into the delay line isdirectly representative of the succession or position of the interfacesof the object 20, on which the reflections took place.

It is thus possible to image structures of complex layers, for examplealong the measurement axis 10 of FIG. 2, and to obtain the succession ofall the layers or of all the interfaces.

Advantageously, the measurement beam originating from the measurementcollimator 39 is inserted into the optical imaging means 34, through thedistal objective 36 of which in particular it passes. Thus, it ispossible to carry out measurements whilst observing the object with thecamera 21.

The TD-OCT sensor 46 comprises a second measurement path, with acollimation optic 40, which makes it possible to also carry outmeasurements via the surface opposite the object 20 relative to theimaging system.

This makes it possible to measure, for example, successions of layers ofthe object 20 on either side of an opaque structure 2, for example alongthe measurement axis 6.

Insofar as the TD-OCT sensor 46 provides absolute optical distancemeasurements relative to the reference in the collimators 39 or 40, thisconfiguration, termed “caliper” measurement, also makes it possible tocarry out thickness measurements on opaque structures 2, with suitablecalibration of the two measurement paths 39, 40.

A drawback of the TD-OCT sensor 46 is that it does not make it possibleto distinguish interfaces separated by less than a few micrometres. Thislimitation is due to the fact that the width of the interference peaksis an inverse function of the spectral width of the source 61, and thespectral width of the sources that are commercially available atreasonable cost is limited.

Advantageously, the system according to the invention also comprises asensor 45 which operates according to a principle of frequency- orspectral-domain low-coherence interferometry. This technique is alsocalled “Frequency Domain Optical Coherence Tomography”, or FD-OCT.

The FD-OCT sensor 45 comprises a light source which emits apolychromatic light in the near-infrared, so as to be able to penetratethe layers of the object 20. Alternatively, it can utilize awavelength-tunable source, the wavelength of which is varied over timeso as to scan the useful spectrum.

The measurement beam of the FD-OCT sensor 45 is inserted, by means of acollimator 38, into the optical imaging means 34, through the distalobjective 36 of which in particular it passes. Thus, it is possible tocarry out measurements whilst observing the object with the camera 21.

The light reflected by the object 20 is analyzed in the FD-OCT sensor 45by an optical spectrometer.

A spectrum is thus obtained, the undulations of which are representativeof the thicknesses of the layers passed through by the measurement beamof the FD-OCT sensor 45. These undulations are due to the constructiveor destructive interferences that appear at the different wavelengths,as a function of the optical distances between the reflections.

This method has the advantage of making it possible to measure smallthicknesses, up to one micrometre or less depending on the spectralwidth of the source.

Its main drawback is that the spatial succession of the layers of theobject 20 is not retained in the measurements: thickness measurementsare obtained, the order or the sequence of which cannot be determined,which makes interpretation of the measurements difficult for a complexobject 20.

Moreover, the maximum thickness that can be measured with an FD-OCTsensor depends on the resolution of the spectrometer, and therefore onthe number of individual detectors that it comprises. This number ofdetectors is limited in existing spectrometers which use near-infraredsensors in InGaAs technology or multi-quantum wells. It follows that themaximum thickness that can be measured with an FD-OCT sensor is morelimited than with the TD-OCT technique in which it is determined by themaximum delay which can be introduced by the delay line 64.

According to an advantageous aspect of the invention which distinguishesit from the devices of the prior art, the TD-OCT 46 and FD-OCT 45sensors are used in combined manner. This makes it possible, forexample, to carry out measurements of the type of that of themeasurement axis 8 of FIG. 2.

In this example, a transparent layer 4 of a thickness of the order ofone micrometre is deposited on the component surface.

The TD-OCT sensor 46 provides the succession of the layers 10, but thedeposit 4 is too thin for its thickness to be measured: It appears inthe form of a single peak in the measurement signal of the TD-OCT sensor46.

Advantageously, the complementary measurement carried out by the FD-OCTsensor 45 makes it possible to measure this thickness. Thus, bycombining the measurements of the TD-OCT 46 and FD-OCT 45 sensors, arepresentation of the layers along the measurement axis 8 is obtained,which could not be achieved with only one of the two sensors.

The system according to the invention also comprises a distance sensorof the chromatic confocal type 47.

The chromatic confocal sensor 47 is utilized with a chromatic opticconstituted by a dispersive element 41 and a collimator 42. Theseelements are designed so that the different wavelengths of the lightoriginating from the chromatic confocal sensor 47 which passes throughthem are focussed at different distances at the level of the object 20.The reflections on the object 20 are collected by these chromatic optics41, 42, and transmitted to a spectrometer in the chromatic confocalsensor 47. Analysis of the maximum values of the spectrum makes itpossible to measure the position of the interfaces of the object 20 atthe origin of these reflections.

The collimator 42 is mounted on the revolving nosepiece 37. Thedispersive element 41 is integrated in the optical system by means of amobile carriage 44 which moves a reflecting mirror 43. The measurementwith the chromatic confocal sensor 47 cannot be carried out at the sametime as the other measurements, but the elements are adjusted so thatthe optical axis of the chromatic optics 41, 42 coincides with theoptical axis 49 of the imaging system, in order to be able to carry outmeasurements with the chromatic confocal sensor 47 in positionsprecisely located beforehand with the imaging system.

The chromatic confocal sensor 47 has the advantage of making it possibleto measure absolute distances at a high rate, which cannot be achievedwith the FD-OCT sensor 45 or with the TD-OCT sensor 46.

Thus, the three types of sensors utilized in the invention (TD-OCT 46,FD-OCT 45 and chromatic confocal 47) are highly complementary and makeit possible to carry out measurements according to a large number ofconfigurations on the object 20.

The whole of the system is controlled by means of a computer 48 andoperating software, which on the one hand allow the best adjustment ofthe lighting paths in bright field 23, in dark field 27 and intransmission 31, and on the other hand make it possible to carry outmeasurements by optimally combining the TD-OCT 46, FD-OCT 45 andchromatic confocal 47 sensors.

Thus, complex measurement protocols can be carried out in semi-automatedmanner, on the basis of pre-programmed “recipes”, with minimum handlingon the part of the operator.

The measurements can also be automated, by utilizing a priori knowledgeof the object 20, and/or image analysis techniques.

According to embodiment variants, the dark field lighting can beproduced in the form of annular lighting.

According to embodiment variants, the spectral filters 26, 29 of thefirst and second lighting paths can be produced in any other mannermaking it possible to obtain suitable spectral characteristics. They cancomprise in particular:

-   -   a superimposition of layers of dielectric materials in order to        produce an interference filter,    -   a material different from those of the object 20 but having        suitable spectral characteristics.

According to embodiment variants:

-   -   The spectral filter 26 of the first lighting path 23 can be        mounted on a removable support which makes it possible to        withdraw it from the illuminating beam 25. Similarly, the        spectral filter 29 of the second lighting path 27 can be mounted        on a removable support which makes it possible to withdraw it        from the illuminating beam 30. This makes it possible to be able        to image the surface of the object 20 under the best conditions,        i.e. by utilizing the wavelengths of the light from the source        24 and/or light source 28 for which the reflectivity of the        surface of the object 20 is high (here the visible wavelengths);    -   It is possible for the first lighting path 23 not to comprise a        second light source 60;    -   The second lighting path 27 can also comprise a second light        source which makes it possible to generate an illuminating beam        30 with wavelengths for which the reflectivity of the surface of        the object 20 is high (here the visible wavelengths), without        passing through the spectral filter 29;    -   Light sources 24, 60, 28, and/or 32 can be generated from one or        more primary light sources shared between lighting paths 23, 27,        31, simultaneously or sequentially. This can in particular be        achieved with suitable fibre bundles which convey the light from        the primary source or sources towards the optical system;    -   The light sources 24, 60, 28, and/or 32 can comprise any        suitable light source, such as for example discharge lamps or        fibre-optic xenon lamps;    -   The light sources 24, 28, and/or 32 can comprise light sources        with an emission spectrum limited to wavelengths capable of        penetrating into the object 20, such as for example        light-emitting diodes with an emission spectrum centred around        1050 nm. In this case, it is possible for the device according        to the invention not to comprise a spectral filter 26, 29 in the        first and/or the second lighting path 23, 27.

According to embodiment variants, configurations of sensors other thanthat shown in FIG. 1 can be envisaged, depending on the applications.These sensors can be based on other technologies, and/or measuredimensions other than distances and thicknesses.

The imaging device can also be completed by a full-field low-coherenceinterferometer, in order to carry out layout measurements on the object20. This interferometer can be constituted at the level of the distalobjective 36, so as to obtain, on the camera 21, interference fringesrepresentative of the altitudes of the object 20. It can be constitutedfor example by inserting a semi-reflective plate between the distalobjective 36 and the object 20, and a reference mirror between thissemi-reflective plate and the distal objective 36. Layout measurementsof the object 20 can thus be obtained by carrying out a controlledmovement of this object 20 relative to the optical system so as to scanall the useful altitudes.

Of course, the invention is not limited to the examples which have justbeen described, and numerous adjustments can be made to these exampleswithout exceeding the scope of the invention.

1. An imaging device for locating structures through the surface of anobject such as a wafer, in order to position a measuring sensor relativeto said structures, comprising: an imaging sensor; optical imaging meanscapable of producing, on said imaging sensor, an image of the object ina field of view; illuminating means for generating an illuminating beamand lighting said field of view in reflection; and the illuminatingmeans are capable of generating an illuminating beam the spectralcontent of which is suited to the nature of the object, so that thelight of said beam is capable essentially of penetrating into saidobject.
 2. The device of claim 1, in which the illuminating meanscomprise a spectral filter capable of limiting the spectrum of theilluminating beam to wavelengths which are capable essentially ofpenetrating into the object.
 3. The device of claim 2, in which thespectral filter comprises a plate made of a material identical orsimilar to a material of the object.
 4. The device of claim 2, in whichthe spectral filter comprises a silicon plate.
 5. The device of claim 2,in which the illuminating means also comprise: a light source capable ofemitting light with a spectrum comprising first wavelengths capableessentially of being reflected by the surface of the object and secondwavelengths capable essentially of penetrating into the object, andswitching means for inserting the spectral filter into, or withdrawingit from, the illuminating beam.
 6. The device of claim 1, in which theilluminating means comprise a light source capable of emitting a lightthe spectrum of which is limited to wavelengths capable essentially ofpenetrating into the object.
 7. The device of claim 6, in which theilluminating means also comprise a second light source capable ofemitting a light the spectrum of which is limited to wavelengths capableessentially of being reflected by the surface of the object.
 8. Thedevice of claim 1, which comprises an illuminating beam incident in thefield of view along an axis of illumination substantially parallel tothe optical axis of the imaging system.
 9. The device of claim 1, whichcomprises an illuminating beam incident in the field of view along anaxis of illumination forming, with the optical axis of the imagingsystem, an angle greater than the angle defining the numerical apertureof said imaging system.
 10. The device of claim 1, which also comprisesa source of light in transmission arranged so as to illuminate the fieldof view in transmission, through the object.
 11. The device of claim 1,in which the imaging sensor comprises a CCD- or CMOS-type sensor on asilicon substrate.
 12. A system for carrying out dimensionalmeasurements on an object such as a wafer, comprising: at least oneoptical sensor for measuring thickness and/or distance, and an imagingdevice according to claim
 1. 13. The system of claim 12, which alsocomprises at least one optical sensor for measuring thickness and/ordistance based on a principle of time-domain low-coherenceinterferometry.
 14. The system of claim 12, which also comprises atleast one optical sensor for measuring thickness and/or distance basedon a principle of spectral-domain low-coherence interferometry, oroptical frequency scanning interferometry.
 15. The system of claim 12,which comprises at least one optical sensor for measuring thicknessand/or distance with a measurement beam passing through the distalobjective of the optical imaging means.
 16. The system of claim 12,which also comprises at least one optical sensor for measuring thicknessand/or distance, of the chromatic confocal type.
 17. The system of claim12, which comprises at least two optical sensors for measuring thicknessand/or distance arranged respectively, one on a surface of the object onthe side of the optical imaging means and the other on a surfaceopposite said object.
 18. A method for measuring the residual thicknessof material between a surface of a wafer and structures such as vias,comprising steps of: locating said structures through said surface ofthe wafer by means of an imaging device according to claim 1;positioning an optical sensor for measuring thickness and/or distanceopposite said structure; and measuring the residual thickness ofmaterial.